Toward More Accurate Scaling Estimates of CMOS Circuits from 180 nm to 22 nm

With deep submicron technology nodes other methods are needed to obtain scaling factors rather than the traditional scaling factors which held for the pre-submicron era. This work presents scaling factors between major technology nodes between 180 nm and 22 nm operating at voltages from 1.8 V to 0.7 V. Common operating data for these technologies were taken from the International Technology Roadmap for Semiconductors (IRTS). HSpice simulations that rely on the Predictive Technology Model (PTM) for transistor characteristics were used to find the scaling factors.